In materials science, a dislocation is a linear crystallographic defect, or irregularity, within a crystal structure. The presence of dislocations strongly influences many of the properties of real materials. The theory was originally developed by Vito Volterra in 1905.
Some types of dislocations can be visualised as being caused by the termination of a plane of atoms in the middle of a crystal. In such a case, the surrounding planes are not straight, but instead bend around the edge of the terminating plane so that the crystal structure is perfectly ordered on either side. The analogy with a stack of paper is apt: if a half a piece of paper is inserted in a stack of paper, the defect in the stack is only noticeable at the edge of the half sheet.
There are two major types of dislocations:
Mathematically, dislocations are a type of topological defect, sometimes called a soliton. The mathematical theory explains why dislocations behave as stable particles: they can be moved about, but maintain their identity as they move. While two dislocations of opposite orientation, when brought together, can cancel each other (this is the process of annealing), there is no way a single dislocation can "disappear" on its own.
Finally a simple schematic diagram of such atomic planes can be used to illustrate lattice defects such as dislocations. (Figure D represents the "extra half-plane" concept of an edge type dislocation).
Once a picture of an edge dislocation has been formed it is possible to begin to explain the important characteristics used to describe it.
The orientation and magnitude of a dislocation is characterised by its Burgers vector (marked in black in Figure D), which is perpendicular to the dislocation line (marked in blue in Figure D) in the case of the edge, and parallel to it in the case of the screw. In metallic materials, b is aligned with close-packed crystallographic directions and its magnitude is equivalent to one interatomic spacing.
In fact, the dislocations present in real crystalline solids are rarely of a pure edge nature or pure screw, rather they exhibit aspects of both types, and are therefore termed "mixed" dislocations.
properties than the regular lattice within the grains, and therefore present different contrast effects in the electron micrographs. (The dislocations are seen as dark lines in the lighter, central region of the micrographs on the right). Transmission electron micrographs of dislocations typically utilize magnifications of 50,000 to 300,000 times (though the equipment itself offers a wider range of magnifications than this). Some microscopes also permit the in-situ heating and/or deformation of samples, thereby permitting the direct observation of dislocation movement and their interactions.
Field ion microscopy and atom probe techniques offer methods of producing much higher magnifications (typically 3 million times and above) and permit the observation of dislocations at an atomic level.
(By contrast, traditional optical microscopy, which is not appropriate for the observation of dislocations, typically offers magnifications up to a maximum of only around 2000 times).
After chemical etching, small pits are formed where the etching solution preferentially attacks the more highly strained material around the dislocations. Thus, the image features indicate points at which dislocations intercept the sample surface. In this way, dislocations in silicon, for example, can be observed indirectly using an interference microscope. Crystal orientation can be determined by the shape of dislocations - 100 elliptical, 111 - triangular (pyramidal).
Image:Silicon_dislocation_orientation_100_mag_500x.png|Dislocations in silicon, orientation 100
Image:Silicon_dislocation_orientation_111_mag_500x.png|Dislocations in silicon, orientation 111
Image:Silicon_dislocation_orientation_111_mag_500x_2.png|Dislocation in silicon, orientation 111
As shear modulus in metals is typically within the range 20 000 to 150 000 MPa, this is difficult to reconcile with shear stresses in the range 0.5 to 10 MPa observed to produce plastic deformation in experiments.
In 1934, Egon Orowan, Michael Polanyi and G. I. Taylor, roughly simultaneously, realized that plastic deformation could be explained in terms of the theory of dislocations. Dislocations can move if the atoms from one of the surrounding planes break their bonds and rebond with the atoms at the terminating edge. Even a simple model of the force required to move a dislocation shows that shear is possible at much lower stresses than in a perfect crystal. (Hence, the characteristic malleability of metals).
When metals are subjected to "cold working" (deformation at temperatures which are relatively low as compared to the material's absolute melting temperature, Tm, i.e., typically less than 0.3 Tm) the dislocation density increases due to the formation of new dislocations and dislocation multiplication. The consequent increasing overlap between the strain fields of adjacent dislocations gradually increases the resistance to further dislocation motion. This causes a hardening of the metal as deformation progresses. This effect is known as strain hardening (also “work hardening”). Tangles of dislocations are found at the early stage of deformation and appear as non well-defined boundaries; the process of dynamic recovery leads eventually to the formation of a cellular structure containing boundaries with misorientation lower than 15º (low angle grain boundaries).
The effects of strain hardening by accumulation of dislocations and the grain structure formed at high strain can be removed by appropriate heat treatment (annealing) which promotes the recovery and subsequent recrystallisation of the material.
Versetzung (Materialwissenschaft) | نابجایی | Dislocation | Dislocatie | 転位 | Dislokacija | Dislokaatio | Dislocazione
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