The POWER4 chip is a CPU that implements the 64-bit PowerPC instruction set architecture. Released in 2001, the POWER4 chip is based on the previous POWER3 chip design. The POWER4 chip is a multicore chip, including two PowerPC cores.
The functional unit of the POWER4™ consists of two 64-bit implementations of the PowerPC AS Architecture. The POWER4™ has an L2 unified cache, divided into three equal parts. Each has its own independent L2 controller which can feed 32 bytes of data per cycle. The Core Interface Unit (CIU) connects each L2 controller to either the data cache or instruction cache in either of the two processors. The Non-Cacheable (NC) Unit is responsible for handling instruction serializing functions and performing any noncacheable operations in the storage topology. There is an L3 cache controller, but the actual memory is off-chip. The GX bus controller controls I/O device communications, and there are two 4-byte wide GX buses, one incoming and the other outgoing. The Fabric Controller is the master controller for the network of buses, controlling communications for both L1/L2 controllers, communications between POWER4™ chips {4-way, 8-way, 16-way, 32-way} and POWER4™ MCM’s. Trace-and-Debug, used for First Failure Data Capture, is provided. There is also a Built In Self Test function (BIST) and Performance Monitoring Unit (PMU). Power-On Reset (POR) is supported.
The POWER4 implements a superscalar microarchitecture through high-frequency speculative out-of-order execution using 8 independent execution units. They are: 2 floating-point units(FP1-2), 2 load-store units(LD1-2), 2 fixed-point units(FX1-2), 1 branch unit(BR), and 1 conditional-register unit(CR).
The pipeline stages are:
| Clock GHz | >1.3 | |
|---|---|---|
| Power | 115 W | 1.5 V @ 1.1 GHz |
| Transistors | 174 million | |
| Gate L | 90 nm | |
| Gate oxide | 2.3 nm | |
| Metal-layer | pitch | thickness |
| M1 | 500 nm | 310 nm |
| M2 | 630 nm | 310 nm |
| M3-M5 | 630 nm | 420 nm |
| M6(MQ) | 1260 nm | 920 nm |
| M7(LM) | 1260 nm | 920 nm |
| Dielectric | ~4.2 | |
| Vdd | 1.6 V |