The Bridgman technique is a method of growing single crystal ingots or boules.

The method involves heating polycrystalline material in a container above its melting point and slowly cooling it from one end where a seed crystal is located. Single crystal material is progressively formed along the length of the container. The process can be carried out in a horizontal or vertical geometry.

It is a popular method of producing certain semiconductor crystals, such as gallium arsenide where the Czochralski process is more difficult.

Industrial processes | Semiconductor device fabrication